Avalanche dynamics in silicon avalanche single- and few-photon sensitive photodiode

Automated Characterization of Single-photon Avalanche Photodiode

We report an automated characterization of a single-photon detector based on commercial silicon avalanche photodiode (PerkinElmer C30902SH). The photodiode is characterized by I-V curves at different illumination levels (darkness, 10 pW and 10 μW), dark count rate and photon detection efficiency at different bias voltages. The automated characterization routine is implemented in C++ running on ...

Experimental multi-photon-resolving detector using a single avalanche photodiode

There is an increasing need for identifying the number of photons that is contained within a weak light pulse or time interval of a weak cw light field. A device capable of photon-number resolution would contribute both to fundamental research in the area of quantum optics and to more-or-less practical quantum communication systems, such as quantum key distribution schemes [1]. In the former ca...

Neural Imaging Using Single-Photon Avalanche Diodes

Introduction: This paper analyses the ability of single-photon avalanche diodes (SPADs) for neural imaging. The current trend in the production of SPADs moves toward the minimumdark count rate (DCR) and maximum photon detection probability (PDP). Moreover, the jitter response which is the main measurement characteristic for the timing uncertainty is progressing. Methods: The neural imaging pro...

Modelling of High Quantum Efficiency Avalanche Photodiode

A model of a low noise high quantum efficiency n+np Germanium Photodiode utilizing ion implantation technique and subsequent drive-in diffusion in the n layer is presented. Numerical analysis is used to study the influence of junction depth and bulk concentration on the electric field profile and quantum efficiency. The performance of the device is theoretically treated especially at the wave-l...

Memory effect in silicon time-gated single-photon avalanche diodes